IRF7313TRPBF-1 Tech Spezifikatioune
Infineon Technologies - IRF7313TRPBF-1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7313TRPBF-1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V | |
| Power - Max | 2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | IRF731 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7313TRPBF-1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7313TRPBF-1 | IRF7314PBF | IRF7314QTRPBF | IRF7313QTRPBF |
| Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
| Entworf fir Source Voltage (Vdss) | 30V | 20V | 20V | 30V |
| Power - Max | 2W (Ta) | 2W | 2.4W | 2W |
| Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
| Package protegéieren | Tape & Reel (TR) | Tube | Cut Tape (CT) | Cut Tape (CT) |
| Basis Produktnummer | IRF731 | IRF731 | IRF731 | IRF731 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | 5.3A | 5.2A | 6.5A |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V | 58mOhm @ 2.9A, 4.5V | 58mOhm @ 5.2A, 4.5V | 29mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V | 780pF @ 15V | 913pF @ 15V | 650pF @ 25V |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 700mV @ 250µA | 700mV @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | 29nC @ 4.5V | 29nC @ 4.5V | 33nC @ 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-SOIC | 8-SO | 8-SO | 8-SO |
| Serie | HEXFET® | HEXFET® | - | - |
| FET Feature | - | Logic Level Gate | Logic Level Gate | - |
Eroflueden IRF7313TRPBF-1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7313TRPBF-1 - Infineon Technologies.
IRF7314QIRIRF7314PBFInternational RectifierP-CHANNEL POWER MOSFETIRF7314QTRPBFInfineon TechnologiesMOSFET 2P-CH 20V 5.2A 8SOICIRF7313TR MOSIRIRF7313QPBFIRIRF7313QTRPBF.IRIRF7313QInfineonIRF7313TRPBF MOSCypress Semiconductor (Infineon Technologies)IRF7314SI&RIRF7314QTRIRFIRF7314TRIRIRF7314QPBFIRIRF7313PBF-1IRIRF7313TRIRIRF7313QTRPBFInfineon TechnologiesMOSFET 2N-CH 30V 6.5A 8-SOICIRF7314TRPBFInfineon TechnologiesMOSFET 2P-CH 20V 5.3A 8-SOICIRF7314IRIRF7313TRPBFInfineon TechnologiesMOSFET 2N-CH 30V 6.5A 8-SOIC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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