IRF7241TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7241TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7241TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 41mOhm @ 6.2A, 10V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.2A (Ta) | |
Basis Produktnummer | IRF7241 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7241TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF7241TRPBF | IRF7241 | IRF730 | IRF7241TR |
Hiersteller | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V | 3220 pF @ 25 V | 700 pF @ 25 V | 3220 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 400 V | 40 V |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 74W (Tc) | 2.5W (Ta) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | TO-220-3 | 8-SOIC (0.154", 3.90mm Width) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.2A (Ta) | 6.2A (Ta) | 5.5A (Tc) | 6.2A (Ta) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 4V @ 250µA | 3V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | 80 nC @ 10 V | 38 nC @ 10 V | 80 nC @ 10 V |
Supplier Device Package | 8-SO | 8-SO | TO-220AB | 8-SO |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 41mOhm @ 6.2A, 10V | 41mOhm @ 6.2A, 10V | 1Ohm @ 3.3A, 10V | 41mOhm @ 6.2A, 10V |
Basis Produktnummer | IRF7241 | - | IRF730 | - |
Eroflueden IRF7241TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7241TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.