IRF7220TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7220TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7220TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 600mV @ 250µA (Min) | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 4.5V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 8075 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 14 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7220TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF7220TRPBF | IRF7233TRPBF | IRF7220 | IRF7220GTRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 5 V | 74 nC @ 5 V | 125 nC @ 5 V | 125 nC @ 5 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 8075 pF @ 10 V | 6000 pF @ 10 V | 8075 pF @ 10 V | 8075 pF @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta) | 9.5A (Ta) | 11A (Ta) | 11A (Ta) |
Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 4.5V | 20mOhm @ 9.5A, 4.5V | 12mOhm @ 11A, 4.5V | 12mOhm @ 11A, 4.5V |
Entworf fir Source Voltage (Vdss) | 14 V | 12 V | 14 V | 14 V |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) |
Vgs (th) (Max) @ Id | 600mV @ 250µA (Min) | 600mV @ 250µA (Min) | 600mV @ 250µA (Min) | 600mV @ 250µA (Min) |
FET Feature | - | - | - | - |
Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±12V | ±12V | ±12V | ±12V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Eroflueden IRF7220TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7220TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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