IRF7105TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7105TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7105TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 25V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A, 2.3A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | IRF71 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7105TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7105TRPBF | IRF7105QTRPBF | IRF7105PBF | IRF7106 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | HEXFET® | - | HEXFET® | HEXFET® |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 1V @ 250µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A, 2.3A | 3.5A, 2.3A | 3.5A, 2.3A | 3A, 2.5A |
| Entworf fir Source Voltage (Vdss) | 25V | 25V | 25V | 20V |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tube | Tube |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 10V | 100mOhm @ 1A, 10V | 100mOhm @ 1A, 10V | 125mOhm @ 1A, 10V |
| FET Feature | - | - | - | - |
| Power - Max | 2W | 2W | 2W | 2W |
| Basis Produktnummer | IRF71 | IRF71 | IRF71 | IRF71 |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | 27nC @ 10V | 27nC @ 10V | 25nC @ 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V | 330pF @ 15V | 330pF @ 15V | 300pF @ 15V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Eroflueden IRF7105TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7105TRPBF - Infineon Technologies.
IRF7105QIRIRF7104TRPBF.IRIRF7108IRIRF7106TRPBFIRFIRF7105IRIRF7105TRPBF.IRIRF7105QPBFIRIRF7106TRIRIRF7105QTRPBFInfineon TechnologiesMOSFET N/P-CH 25V 8-SOICIRF7107TRPBFIRIRF7105PBFInfineon TechnologiesMOSFET N/P-CH 25V 8-SOICIRF7106Infineon TechnologiesMOSFET N/P-CH 20V 3A/2.5A 8-SOICIRF7105QTRPBF.IRIRF7106TR MOSIRIRF7108TRIRFIRF7105QTRPBF MOSIRIRF7105TRIRF
IRF7105TRPBF MOSCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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