IRF6802SDTRPBF Tech Spezifikatioune
International Rectifier - IRF6802SDTRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRF6802SDTRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.1V @ 35µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric SA | |
Serie | DirectFET™ | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 16A, 10V | |
Power - Max | 1.7W (Ta), 21W (Tc) | |
Package / Case | DirectFET™ Isometric SA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 13V | |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 25V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 57A (Tc) | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | IRF6802 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRF6802SDTRPBF.
Produktiounsattriff | ||||
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Part Number | IRF6802SDTRPBF | IRF6802SDTR1PBF | IRF6898MTRPBF | IRF6894MTRPBF |
Hiersteller | International Rectifier | Infineon Technologies | International Rectifier | International Rectifier |
Entworf fir Source Voltage (Vdss) | 25V | 25V | 25 V | 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 57A (Tc) | 16A | 40A (Ta), 214A (Tc) | 32A (Ta), 160A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 13V | 1350pF @ 13V | 5630 pF @ 13 V | 4160 pF @ 13 V |
Basis Produktnummer | IRF6802 | IRF6802 | - | - |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 16A, 10V | 4.2mOhm @ 16A, 10V | 1.1mOhm @ 40A, 10V | 1.3mOhm @ 33A, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | DirectFET™ Isometric SA | DIRECTFET™ SA | DirectFET™ Isometric MX | DIRECTFET™ MX |
Power - Max | 1.7W (Ta), 21W (Tc) | 1.7W | - | - |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - | - |
Vgs (th) (Max) @ Id | 2.1V @ 35µA | 2.1V @ 35µA | 2.1V @ 100µA | 2.1V @ 100µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | DirectFET™ | HEXFET® | HEXFET® | HEXFET® |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V | 13nC @ 4.5V | 68 nC @ 4.5 V | 39 nC @ 4.5 V |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
FET Feature | - | Logic Level Gate | Schottky Diode (Body) | Schottky Diode (Body) |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
Package / Case | DirectFET™ Isometric SA | DirectFET™ Isometric SA | DirectFET™ Isometric MX | DirectFET™ Isometric MX |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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