IRF6655TR1PBF Tech Spezifikatioune
Infineon Technologies - IRF6655TR1PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF6655TR1PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4.8V @ 25µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DIRECTFET™ SH | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V | |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) | |
Package / Case | DirectFET™ Isometric SH | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Ta), 19A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF6655TR1PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF6655TR1PBF | IRF6665TRPBF | IRF6648TRPBF | IRF6648TR1 |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V | 62mOhm @ 5A, 10V | 7mOhm @ 17A, 10V | 7mOhm @ 17A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V | 530 pF @ 25 V | 2120 pF @ 25 V | 2120 pF @ 25 V |
Package / Case | DirectFET™ Isometric SH | DirectFET™ Isometric SH | DirectFET™ Isometric MN | DirectFET™ Isometric MN |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Ta), 19A (Tc) | 4.2A (Ta), 19A (Tc) | 86A (Tc) | 86A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | DIRECTFET™ SH | DIRECTFET™ SH | DIRECTFET™ MN | DIRECTFET™ MN |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 60 V | 60 V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 10 V | 13 nC @ 10 V | 50 nC @ 10 V | 50 nC @ 10 V |
Vgs (th) (Max) @ Id | 4.8V @ 25µA | 5V @ 250µA | 4.9V @ 150µA | 4.9V @ 150µA |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) | 2.2W (Ta), 42W (Tc) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) |
Eroflueden IRF6655TR1PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF6655TR1PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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