IRF6633TR1 Tech Spezifikatioune
Infineon Technologies - IRF6633TR1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF6633TR1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DIRECTFET™ MP | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 16A, 10V | |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) | |
| Package / Case | DirectFET™ Isometric MP | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 59A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF6633TR1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF6633TR1 | IRF6635 | IRF6631TR1PBF | IRF6635TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 59A (Tc) | 32A (Ta), 180A (Tc) | 13A (Ta), 57A (Tc) | 32A (Ta), 180A (Tc) |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package / Case | DirectFET™ Isometric MP | DirectFET™ Isometric MX | DirectFET™ Isometric SQ | DirectFET™ Isometric MX |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | DIRECTFET™ MP | DIRECTFET™ MX | DIRECTFET™ SQ | DIRECTFET™ MX |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) | 2.8W (Ta), 89W (Tc) | 2.2W (Ta), 42W (Tc) | 2.8W (Ta), 89W (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 16A, 10V | 1.8mOhm @ 32A, 10V | 7.8mOhm @ 13A, 10V | 1.8mOhm @ 32A, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 30 V | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 10 V | 5970 pF @ 15 V | 1450 pF @ 15 V | 5970 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | 71 nC @ 4.5 V | 18 nC @ 4.5 V | 71 nC @ 4.5 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.35V @ 250µA | 2.35V @ 25µA | 2.35V @ 250µA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Eroflueden IRF6633TR1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF6633TR1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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