IRF6622TRPBF Tech Spezifikatioune
Infineon Technologies - IRF6622TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF6622TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.35V @ 25µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DIRECTFET™ SQ | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 15A, 10V | |
Power Dissipation (Max) | 2.2W (Ta), 34W (Tc) | |
Package / Case | DirectFET™ Isometric SQ | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 13 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 59A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF6622TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF6622TRPBF | IRF6628TRPBF | IRF6623TR1 | IRF6622TR1PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 15A, 10V | 2.5mOhm @ 27A, 10V | 5.7mOhm @ 15A, 10V | 6.3mOhm @ 15A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 59A (Tc) | 27A (Ta), 160A (Tc) | 16A (Ta), 55A (Tc) | 15A (Ta), 59A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Power Dissipation (Max) | 2.2W (Ta), 34W (Tc) | 2.8W (Ta), 96W (Tc) | 1.4W (Ta), 42W (Tc) | 2.2W (Ta), 34W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | DIRECTFET™ SQ | DIRECTFET™ MX | DIRECTFET™ ST | DIRECTFET™ SQ |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | DirectFET™ Isometric SQ | DirectFET™ Isometric MX | DirectFET™ Isometric ST | DirectFET™ Isometric SQ |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 25 V | 25 V | 20 V | 25 V |
Vgs (th) (Max) @ Id | 2.35V @ 25µA | 2.35V @ 100µA | 2.2V @ 250µA | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | 47 nC @ 4.5 V | 17 nC @ 4.5 V | 17 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 13 V | 3770 pF @ 15 V | 1360 pF @ 10 V | 1450 pF @ 13 V |
Eroflueden IRF6622TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF6622TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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