IRF6611TR1 Tech Spezifikatioune
Infineon Technologies - IRF6611TR1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF6611TR1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.25V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DIRECTFET™ MX | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 27A, 10V | |
| Power Dissipation (Max) | 3.9W (Ta), 89W (Tc) | |
| Package / Case | DirectFET™ Isometric MX | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4860 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 32A (Ta), 150A (Tc) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 3 (168 Hours) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF6611TR1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF6611TR1 | IRF6612TRPBF | IRF6612TR1PBF | IRF6613TR1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 40 V |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Supplier Device Package | DIRECTFET™ MX | DIRECTFET™ MX | DIRECTFET™ MX | DIRECTFET™ MT |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Package / Case | DirectFET™ Isometric MX | DirectFET™ Isometric MX | DirectFET™ Isometric MX | DirectFET™ Isometric MT |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V | 45 nC @ 4.5 V | 45 nC @ 4.5 V | 63 nC @ 4.5 V |
| Vgs (th) (Max) @ Id | 2.25V @ 250µA | 2.25V @ 250µA | 2.25V @ 250µA | 2.25V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4860 pF @ 15 V | 3970 pF @ 15 V | 3970 pF @ 15 V | 5950 pF @ 15 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 32A (Ta), 150A (Tc) | 24A (Ta), 136A (Tc) | 24A (Ta), 136A (Tc) | 23A (Ta), 150A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 3.9W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 27A, 10V | 3.3mOhm @ 24A, 10V | 3.3mOhm @ 24A, 10V | 3.4mOhm @ 23A, 10V |
Eroflueden IRF6611TR1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF6611TR1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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