IRF630NL Tech Spezifikatioune
Infineon Technologies - IRF630NL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF630NL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-262 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V | |
| Power Dissipation (Max) | 82W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.3A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF630NL.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | IRF630NL | IRF630B_FP001 | IRF630NPBF | IRF630FP |
| Hiersteller | Infineon Technologies | onsemi | Infineon Technologies | STMicroelectronics |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 82W (Tc) | 72W (Tc) | 82W (Tc) | 30W (Tc) |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V | 720 pF @ 25 V | 575 pF @ 25 V | 700 pF @ 25 V |
| Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V | 400mOhm @ 4.5A, 10V | 300mOhm @ 5.4A, 10V | 400mOhm @ 4.5A, 10V |
| Supplier Device Package | TO-262 | TO-220-3 | TO-220AB | TO-220FP |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 29 nC @ 10 V | 35 nC @ 10 V | 45 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-220-3 | TO-220-3 Full Pack |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.3A (Tc) | 9A (Tc) | 9.3A (Tc) | 9A (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 150°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Serie | HEXFET® | - | HEXFET® | MESH OVERLAY™ II |
Eroflueden IRF630NL PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF630NL - Infineon Technologies.
IRF630NS/F630NSIR
IRF630MFSTMicroelectronicsIRF630B_FP001onsemiMOSFET N-CH 200V 9A TO220-3IRF630HHARRIRF630N MOSIRIRF630NIRIRF630MFRSTMicroelectronicsIRF630NPBFInfineon TechnologiesMOSFET N-CH 200V 9.3A TO220ABIRF630NSTRLIRIRF630NPBF-MXIRIRF630MSTMicroelectronicsIRF630FPSTMicroelectronicsMOSFET N-CH 200V 9A TO220FP
IRF630NLPBFInfineon TechnologiesMOSFET N-CH 200V 9.3A TO262
IRF630NSInfineon TechnologiesMOSFET N-CH 200V 9.3A D2PAKIRF630NPBF MXIRIRF630MFPSTMicroelectronicsIRF630NPBF MOSIRIRF630NSPBFInternational RectifierHEXFET POWER MOSFET| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.