IRF5210LPBF Tech Spezifikatioune
Infineon Technologies - IRF5210LPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5210LPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-262 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V | |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | |
| Basis Produktnummer | IRF5210 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5210LPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF5210LPBF | IRF5210STRLPBF | IRF520PBF | IRF520NSTRRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | 230 nC @ 10 V | 16 nC @ 10 V | 25 nC @ 10 V |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V | 60mOhm @ 38A, 10V | 270mOhm @ 5.5A, 10V | 200mOhm @ 5.7A, 10V |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
| Serie | HEXFET® | HEXFET® | - | HEXFET® |
| Basis Produktnummer | IRF5210 | IRF5210 | IRF520 | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | 38A (Tc) | 9.2A (Tc) | 9.7A (Tc) |
| Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V | 2780 pF @ 25 V | 360 pF @ 25 V | 330 pF @ 25 V |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) | 3.1W (Ta), 170W (Tc) | 60W (Tc) | 3.8W (Ta), 48W (Tc) |
| Supplier Device Package | TO-262 | D2PAK | TO-220AB | D2PAK |
Eroflueden IRF5210LPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5210LPBF - Infineon Technologies.
IRF5210SRLPBFTRIRF5210IRIRF5210STRLPBFInfineon TechnologiesMOSFET P-CH 100V 38A D2PAKIRF5210STRPBFIRIRF520NSTRPBFIRIRF5210SIRIRF5210S MOSIRIRF520VLIRIRF5210SPBF MOSIRIRF5210STRLIRIRF520PBFVishay SiliconixMOSFET N-CH 100V 9.2A TO220ABIRF520NSTRRPBFInfineon TechnologiesMOSFET N-CH 100V 9.7A D2PAKIRF5210HRIRIRF5210SPBFInfineon TechnologiesMOSFET P-CH 100V 38A D2PAKIRF520VPBFIR
IRF5210PBFInfineon TechnologiesMOSFET P-CH 100V 40A TO220ABIRF520SVishay SiliconixMOSFET N-CH 100V 9.2A D2PAKIRF520VSTRRPBFIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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