IRF4104S Tech Spezifikatioune
Infineon Technologies - IRF4104S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF4104S
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 75A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF4104S.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF4104S | IRF431 | IRF4104L | IRF40R207 |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 75A, 10V | 1.5Ohm @ 2.5A, 10V | 5.5mOhm @ 75A, 10V | 5.1mOhm @ 55A, 10V |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 3.9V @ 50µA |
Entworf fir Source Voltage (Vdss) | 40 V | 450 V | 40 V | 40 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V | 800 pF @ 25 V | 3000 pF @ 25 V | 2110 pF @ 25 V |
Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Bulk | Tube | Tape & Reel (TR) |
Serie | HEXFET® | - | HEXFET® | HEXFET®, StrongIRFET™ |
Power Dissipation (Max) | 140W (Tc) | 75W (Tc) | 140W (Tc) | 83W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | 30 nC @ 10 V | 100 nC @ 10 V | 68 nC @ 10 V |
Supplier Device Package | D2PAK | TO-3 | TO-262 | PG-TO252-3 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 6V, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 4.5A | 75A (Tc) | 56A (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-204AA, TO-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Eroflueden IRF4104S PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF4104S - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.