IRF3703PBF Tech Spezifikatioune
Infineon Technologies - IRF3703PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF3703PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 76A, 10V | |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 8250 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 209 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 7V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 210A (Tc) | |
| Basis Produktnummer | IRF3703 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF3703PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF3703PBF | IRF3704STRLPBF | IRF3610STRLPBF | IRF3704STRL |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Vgs (Max) | ±20V | ±20V | - | ±20V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | 4V @ 250µA | 3V @ 250µA |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 100 V | 20 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 210A (Tc) | 77A (Tc) | 103A (Tc) | 77A (Tc) |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) | 87W (Tc) | - | 87W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | TO-220AB | D2PAK | PG-TO263-3 | D2PAK |
| Basis Produktnummer | IRF3703 | - | IRF3610 | - |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 8250 pF @ 25 V | 1996 pF @ 10 V | 5380 pF @ 25 V | 1996 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 209 nC @ 10 V | 19 nC @ 4.5 V | 150 nC @ 10 V | 19 nC @ 4.5 V |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 76A, 10V | 9mOhm @ 15A, 10V | 11.6mOhm @ 62A, 10V | 9mOhm @ 15A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 7V, 10V | 4.5V, 10V | - | 4.5V, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden IRF3703PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF3703PBF - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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