IRF2907ZSTRLPBF Tech Spezifikatioune
Infineon Technologies - IRF2907ZSTRLPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF2907ZSTRLPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 160A (Tc) | |
Basis Produktnummer | IRF2907 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF2907ZSTRLPBF.
Produktiounsattriff | ||||
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Part Number | IRF2907ZSTRLPBF | IRF3007PBF | IRF3000 | IRF3000PBF |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Basis Produktnummer | IRF2907 | IRF3007 | - | - |
Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V | 130 nC @ 10 V | 33 nC @ 10 V | 33 nC @ 10 V |
Supplier Device Package | D2PAK | TO-220AB | 8-SO | 8-SO |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 75 V | 75 V | 300 V | 300 V |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±30V | ±30V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V | 12.6mOhm @ 48A, 10V | 400mOhm @ 960mA, 10V | 400mOhm @ 960mA, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 160A (Tc) | 75A (Tc) | 1.6A (Ta) | 1.6A (Ta) |
Package protegéieren | Tape & Reel (TR) | Bulk | Tube | Tube |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Power Dissipation (Max) | 300W (Tc) | 200W (Tc) | 2.5W (Ta) | 2.5W (Ta) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V | 3270 pF @ 25 V | 730 pF @ 25 V | 730 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden IRF2907ZSTRLPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF2907ZSTRLPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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