IRF2807ZSTRLPBF Tech Spezifikatioune
Infineon Technologies - IRF2807ZSTRLPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF2807ZSTRLPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V | |
Power Dissipation (Max) | 170W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | |
Basis Produktnummer | IRF2807 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF2807ZSTRLPBF | IRF2807ZSPBF | IRF2903ZSPBF | IRF2807ZSTRRPBF |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 110 nC @ 10 V | 240 nC @ 10 V | 110 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V | 9.4mOhm @ 53A, 10V | 2.4mOhm @ 75A, 10V | 9.4mOhm @ 53A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 170W (Tc) | 170W (Tc) | 231W (Tc) | 170W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Basis Produktnummer | IRF2807 | - | - | - |
Supplier Device Package | D2PAK | PG-TO263-3-2 | D2PAK | D2PAK |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V | 3270 pF @ 25 V | 6320 pF @ 25 V | 3270 pF @ 25 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Entworf fir Source Voltage (Vdss) | 75 V | 75 V | 30 V | 75 V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tube | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 75A (Tc) | 75A (Tc) | 75A (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 150µA | 4V @ 250µA |
Eroflueden IRF2807ZSTRLPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF2807ZSTRLPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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