IRF1704 Tech Spezifikatioune
Infineon Technologies - IRF1704 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF1704
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 4mOhm @ 100A, 10V | |
Power Dissipation (Max) | 230W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 6950 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 170A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF1704.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF1704 | IRF1607PBF | IRF1902GTRPBF | IRF1607 |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Supplier Device Package | TO-220AB | TO-220AB | 8-SO | TO-220AB |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | 10V |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 6950 pF @ 25 V | 7750 pF @ 25 V | 310 pF @ 15 V | 7750 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 40 V | 75 V | 20 V | 75 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 170A (Tc) | 142A (Tc) | 4.2A (Ta) | 142A (Tc) |
Rds On (Max) @ Id, Vgs | 4mOhm @ 100A, 10V | 7.5mOhm @ 85A, 10V | 85mOhm @ 4A, 4.5V | 7.5mOhm @ 85A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | 320 nC @ 10 V | 7.5 nC @ 4.5 V | 320 nC @ 10 V |
Package / Case | TO-220-3 | TO-220-3 | 8-SOIC (0.154", 3.90mm Width) | TO-220-3 |
Power Dissipation (Max) | 230W (Tc) | 380W (Tc) | - | 380W (Tc) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 700mV @ 250µA | 4V @ 250µA |
Package protegéieren | Tube | Bulk | Tape & Reel (TR) | Tube |
Operatioun Temperatur | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden IRF1704 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF1704 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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