IRF1404ZPBF Tech Spezifikatioune
Infineon Technologies - IRF1404ZPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF1404ZPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V | |
Power Dissipation (Max) | 200W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | |
Basis Produktnummer | IRF1404 |
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Produktiounsattriff | ||||
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Part Number | IRF1404ZPBF | IRF1404STRLPBF | IRF1404PBF | IRF1404ZSTRLPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V | 4mOhm @ 95A, 10V | 4mOhm @ 121A, 10V | 3.7mOhm @ 75A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 150µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | 162A (Tc) | 202A (Tc) | 180A (Tc) |
Power Dissipation (Max) | 200W (Tc) | 3.8W (Ta), 200W (Tc) | 333W (Tc) | 200W (Tc) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
Supplier Device Package | TO-220AB | D2PAK | TO-220AB | PG-TO263-3 |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 200 nC @ 10 V | 196 nC @ 10 V | 150 nC @ 10 V |
Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V | 7360 pF @ 25 V | 5669 pF @ 25 V | 4340 pF @ 25 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | IRF1404 | IRF1404 | IRF1404 | IRF1404 |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Eroflueden IRF1404ZPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF1404ZPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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