IPW60R040C7XKSA1 Tech Spezifikatioune
Infineon Technologies - IPW60R040C7XKSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPW60R040C7XKSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 1.24mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO247-3 | |
Serie | CoolMOS™ C7 | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 24.9A, 10V | |
Power Dissipation (Max) | 227W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 400 V | |
Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | IPW60R040 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPW60R040C7XKSA1.
Produktiounsattriff | ||||
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Part Number | IPW60R040C7XKSA1 | IPW60R031CFD7XKSA1 | IPW60R041C6 | IPW60R024P7XKSA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Vgs (th) (Max) @ Id | 4V @ 1.24mA | 4.5V @ 1.63mA | - | 4V @ 2.03mA |
Supplier Device Package | PG-TO247-3 | PG-TO247-3 | - | PG-TO247-3-41 |
Package protegéieren | Tube | Tube | - | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 63A (Tc) | - | 101A (Tc) |
Power Dissipation (Max) | 227W (Tc) | 278W (Tc) | - | 291W (Tc) |
Mounting Type | Through Hole | Through Hole | - | Through Hole |
Serie | CoolMOS™ C7 | CoolMOS™ CFD7 | - | CoolMOS™ P7 |
Vgs (Max) | ±20V | ±20V | - | ±20V |
FET Typ | N-Channel | N-Channel | - | N-Channel |
Rds On (Max) @ Id, Vgs | 40mOhm @ 24.9A, 10V | 31mOhm @ 32.6A, 10V | - | 24mOhm @ 42.4A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
Package / Case | TO-247-3 | TO-247-3 | - | TO-247-3 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V | 141 nC @ 10 V | - | 164 nC @ 10 V |
Basis Produktnummer | IPW60R040 | IPW60R031 | - | IPW60R024 |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | - | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 400 V | 5623 pF @ 400 V | - | 7144 pF @ 400 V |
Eroflueden IPW60R040C7XKSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPW60R040C7XKSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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