IPU10N03LA Tech Spezifikatioune
Infineon Technologies - IPU10N03LA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPU10N03LA
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 20µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | P-TO251-3-1 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 52W (Tc) | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1358 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 25 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | |
| Basis Produktnummer | IPU10N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPU10N03LA.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPU10N03LA | IPU60R1K4C6 | IPU60R1K0CE | IPU50R2K0CE |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 30A, 10V | 1.4Ohm @ 1.1A, 10V | 1Ohm @ 1.5A, 10V | - |
| Basis Produktnummer | IPU10N | - | - | IPU50R |
| Vgs (th) (Max) @ Id | 2V @ 20µA | 3.5V @ 90µA | 3.5V @ 130µA | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 3.2A (Tc) | 6.8A (Tc) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1358 pF @ 15 V | 200 pF @ 100 V | 280 pF @ 100 V | - |
| Entworf fir Source Voltage (Vdss) | 25 V | 650 V | 600 V | - |
| FET Feature | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| Serie | OptiMOS™ | CoolMOS™ | CoolMOS™ | * |
| Power Dissipation (Max) | 52W (Tc) | 28.4W (Tc) | 61W (Tc) | - |
| Package protegéieren | Tube | Bulk | Bulk | Bulk |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V | 9.4 nC @ 10 V | 13 nC @ 10 V | - |
| Supplier Device Package | P-TO251-3-1 | PG-TO-251-3-341 | PG-TO251-3 | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | - |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
Eroflueden IPU10N03LA PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPU10N03LA - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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