IPT60R125G7XTMA1 Tech Spezifikatioune
Infineon Technologies - IPT60R125G7XTMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPT60R125G7XTMA1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 320µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-HSOF-8-2 | |
Serie | CoolMOS™ G7 | |
Rds On (Max) @ Id, Vgs | 125mOhm @ 6.4A, 10V | |
Power Dissipation (Max) | 120W (Tc) | |
Package / Case | 8-PowerSFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 400 V | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
Basis Produktnummer | IPT60R125 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPT60R125G7XTMA1.
Produktiounsattriff | ||||
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Part Number | IPT60R125G7XTMA1 | IPT65R195G7XTMA1 | IPT60R055CFD7XTMA1 | IPT60R150G7XTMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | PG-HSOF-8-2 | PG-HSOF-8-2 | PG-HSOF-8-1 | PG-HSOF-8-2 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 20 nC @ 10 V | 67 nC @ 10 V | 23 nC @ 10 V |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4V @ 320µA | 4V @ 240µA | 4.5V @ 760µA | 4V @ 260µA |
Power Dissipation (Max) | 120W (Tc) | 97W (Tc) | 236W (Tc) | 106W (Tc) |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 600 V | 600 V |
Package / Case | 8-PowerSFN | 8-PowerSFN | 8-PowerSFN | 8-PowerSFN |
Rds On (Max) @ Id, Vgs | 125mOhm @ 6.4A, 10V | 195mOhm @ 4.8A, 10V | 55mOhm @ 15.1A, 10V | 150mOhm @ 5.3A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 14A (Tc) | 44A (Tc) | 17A (Tc) |
Basis Produktnummer | IPT60R125 | IPT65R195 | IPT60R055 | IPT60R150 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | CoolMOS™ G7 | CoolMOS™ C7 | CoolMOS™ CFD7 | CoolMOS™ G7 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 400 V | 996 pF @ 400 V | 2721 pF @ 400 V | 902 pF @ 400 V |
Eroflueden IPT60R125G7XTMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPT60R125G7XTMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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