IPP65R660CFD Tech Spezifikatioune
Infineon Technologies - IPP65R660CFD technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPP65R660CFD
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4.5V @ 200µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3-1 | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPP65R660CFD.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPP65R660CFD | IPP70N04S3-07 | IPP65R380C6 | IPP65R600E6 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V | 2700 pF @ 25 V | 710 pF @ 100 V | 440 pF @ 100 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | CoolMOS™ | OptiMOS™T | CoolMOS™ | CoolMOS™ |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 40 nC @ 10 V | 39 nC @ 10 V | 23 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 650 V | 40 V | 650 V | 650 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Power Dissipation (Max) | 62.5W (Tc) | 79W (Tc) | 83W (Tc) | 63W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 80A (Tc) | 10.6A (Tc) | 7.3A (Tc) |
| Supplier Device Package | PG-TO220-3-1 | PG-TO220-3-1 | PG-TO220-3-1 | PG-TO220-3-1 |
| Vgs (th) (Max) @ Id | 4.5V @ 200µA | 4V @ 50µA | 3.5V @ 320µA | 3.5V @ 210µA |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V | 6.5mOhm @ 70A, 10V | 380mOhm @ 3.2A, 10V | 600mOhm @ 2.1A, 10V |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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