IPP65R190C7 Tech Spezifikatioune
Infineon Technologies - IPP65R190C7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPP65R190C7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 290µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3-1 | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.7A, 10V | |
| Power Dissipation (Max) | 72W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 400 V | |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPP65R190C7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPP65R190C7 | IPP65R125C7 | IPP65R190CFD7AAKSA1 | IPP65R190CFD MOS |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | - |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.7A, 10V | 125mOhm @ 8.9A, 10V | 190mOhm @ 6.4A, 10V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | - |
| Package protegéieren | Bulk | Bulk | Tube | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 400 V | 1670 pF @ 400 V | 1291 pF @ 400 V | - |
| Supplier Device Package | PG-TO220-3-1 | PG-TO220-3-1 | PG-TO220-3 | - |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 35 nC @ 10 V | 28 nC @ 10 V | - |
| Power Dissipation (Max) | 72W (Tc) | 101W (Tc) | 77W (Tc) | - |
| Serie | CoolMOS™ | CoolMOS™ | Automotive, AEC-Q101, CoolMOS™ | - |
| Vgs (th) (Max) @ Id | 4V @ 290µA | 4V @ 440µA | 4.5V @ 320µA | - |
| Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 650 V | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | 18A (Tc) | 14A (Tc) | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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