IPP25N06S3L-22 Tech Spezifikatioune
Infineon Technologies - IPP25N06S3L-22 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPP25N06S3L-22
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.2V @ 20µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-3-1 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 21.6mOhm @ 17A, 10V | |
Power Dissipation (Max) | 50W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | |
Basis Produktnummer | IPP25N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPP25N06S3L-22.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IPP25N06S3L-22 | IPP230N06L3G | IPP220N25NFD | IPP320N20N3GXKSA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | 30A (Tc) | 61A (Tc) | 34A (Tc) |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™FD | OptiMOS™ |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | 10 nC @ 4.5 V | 86 nC @ 10 V | 29 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V | 1600 pF @ 30 V | 7076 pF @ 125 V | 2350 pF @ 100 V |
Vgs (th) (Max) @ Id | 2.2V @ 20µA | 2.2V @ 11µA | 4V @ 270µA | 4V @ 90µA |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Bulk | Bulk | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Power Dissipation (Max) | 50W (Tc) | 36W (Tc) | 300W (Tc) | 136W (Tc) |
Basis Produktnummer | IPP25N | - | - | IPP320 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 21.6mOhm @ 17A, 10V | 23mOhm @ 30A, 10V | 22mOhm @ 61A, 10V | 32mOhm @ 34A, 10V |
Entworf fir Source Voltage (Vdss) | 55 V | 60 V | 250 V | 200 V |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 4.5V, 10V | - | 10V |
Supplier Device Package | PG-TO220-3-1 | PG-TO220-3 | PG-TO220-3 | PG-TO220-3 |
Vgs (Max) | ±16V | ±20V | ±20V | ±20V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Eroflueden IPP25N06S3L-22 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPP25N06S3L-22 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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