IPP126N10N3G Tech Spezifikatioune
Infineon Technologies - IPP126N10N3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPP126N10N3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 46µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3 | |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 46A, 10V | |
| Power Dissipation (Max) | 94W (Tc) | |
| Package / Case | TO-220-3 | |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | - | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 58A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPP126N10N3G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPP126N10N3G | IPP120P04P4L03AKSA1 | IPP120P04P404AKSA1 | IPP120N20NFDAKSA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 234 nC @ 10 V | 205 nC @ 10 V | 87 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | - | 4.5V, 10V | 10V | 10V |
| Supplier Device Package | PG-TO220-3 | PG-TO220-3-1 | PG-TO220-3-1 | PG-TO220-3 |
| Entworf fir Source Voltage (Vdss) | 100 V | 40 V | 40 V | 200 V |
| Power Dissipation (Max) | 94W (Tc) | 136W (Tc) | 136W (Tc) | 300W (Tc) |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 46A, 10V | 3.4mOhm @ 100A, 10V | 3.8mOhm @ 100A, 10V | 12mOhm @ 84A, 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V | 15000 pF @ 25 V | 14790 pF @ 25 V | 6650 pF @ 100 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Vgs (th) (Max) @ Id | 3.5V @ 46µA | 2.2V @ 340µA | 4V @ 340µA | 4V @ 270µA |
| FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 58A (Tc) | 120A (Tc) | 120A (Tc) | 84A (Tc) |
| Vgs (Max) | ±20V | ±16V | ±20V | ±20V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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