IPP023N10N5AKSA1 Tech Spezifikatioune
Infineon Technologies - IPP023N10N5AKSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPP023N10N5AKSA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.8V @ 270µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
| Basis Produktnummer | IPP023 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPP023N10N5AKSA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPP023N10N5AKSA1 | IPP024N06N3G | IPP023NE7N3G | IPP023N08N5AKSA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Supplier Device Package | PG-TO220-3 | PG-TO220-3-1 | PG-TO220-3 | PG-TO220-3 |
| Power Dissipation (Max) | 375W (Tc) | 250W (Tc) | 300W (Tc) | 300W (Tc) |
| Package protegéieren | Tube | Bulk | Tube | Tube |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | 2.4mOhm @ 100A, 10V | 2.3mOhm @ 100A, 10V | 2.3mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | 275 nC @ 10 V | 206 nC @ 10 V | 166 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 10V | 6V, 10V |
| Vgs (th) (Max) @ Id | 3.8V @ 270µA | 4V @ 196µA | 3.8V @ 273µA | 3.8V @ 208µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 120A (Tc) | 120A (Tc) | 120A (Tc) |
| Entworf fir Source Voltage (Vdss) | 100 V | 60 V | 75 V | 80 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Basis Produktnummer | IPP023 | - | IPP023N | IPP023 |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 50 V | 23000 pF @ 30 V | 14400 pF @ 37.5 V | 12100 pF @ 40 V |
| Serie | OptiMOS™ | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS™ |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden IPP023N10N5AKSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPP023N10N5AKSA1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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