IPL60R125C7AUMA1 Tech Spezifikatioune
Infineon Technologies - IPL60R125C7AUMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPL60R125C7AUMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 390µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-VSON-4 | |
Serie | CoolMOS™ C7 | |
Rds On (Max) @ Id, Vgs | 125mOhm @ 7.8A, 10V | |
Power Dissipation (Max) | 103W (Tc) | |
Package / Case | 4-PowerTSFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | IPL60R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPL60R125C7AUMA1.
Produktiounsattriff | ||||
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Part Number | IPL60R125C7AUMA1 | IPL60R105P7AUMA1 | IPL60R115CFD7AUMA1 | IPL60R125P7AUMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 103W (Tc) | 137W (Tc) | - | 111W (Tc) |
Rds On (Max) @ Id, Vgs | 125mOhm @ 7.8A, 10V | 105mOhm @ 10.5A, 10V | - | 125mOhm @ 8.2A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V | 1952 pF @ 400 V | - | 1544 pF @ 400 V |
Mounting Type | Surface Mount | Surface Mount | - | Surface Mount |
FET Typ | N-Channel | N-Channel | - | N-Channel |
Basis Produktnummer | IPL60R | IPL60R | IPL60R | IPL60R |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | - | -40°C ~ 150°C (TJ) |
Serie | CoolMOS™ C7 | CoolMOS™ P7 | - | CoolMOS™ P7 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | 45 nC @ 10 V | - | 36 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 33A (Tc) | 22A (Tc) | 27A (Tc) |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Vgs (th) (Max) @ Id | 4V @ 390µA | 4V @ 530µA | - | 4V @ 410µA |
Supplier Device Package | PG-VSON-4 | PG-VSON-4 | - | PG-VSON-4 |
Package / Case | 4-PowerTSFN | 4-PowerTSFN | - | 4-PowerTSFN |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | - | 600 V |
Eroflueden IPL60R125C7AUMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPL60R125C7AUMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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