IPG20N06S415ATMA2 Tech Spezifikatioune
Infineon Technologies - IPG20N06S415ATMA2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPG20N06S415ATMA2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 20µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-4 | |
| Serie | Automotive, AEC-Q101, OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V | |
| Power - Max | 50W | |
| Package / Case | 8-PowerVDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | IPG20N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPG20N06S415ATMA2.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPG20N06S415ATMA2 | IPG20N06S415AATMA1 | IPG20N06S3L-35 | IPG20N06S2L65AATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Power - Max | 50W | 50W | 30W | 43W |
| Vgs (th) (Max) @ Id | 4V @ 20µA | 4V @ 20µA | 2.2V @ 15µA | 2V @ 14µA |
| Entworf fir Source Voltage (Vdss) | 60V | 60V | 55V | 55V |
| Mounting Type | Surface Mount | Surface Mount, Wettable Flank | Surface Mount | Surface Mount, Wettable Flank |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | 29nC @ 10V | 23nC @ 10V | 12nC @ 10V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V | 15.5mOhm @ 17A, 10V | 35mOhm @ 11A, 10V | 65mOhm @ 15A, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V | 2260pF @ 25V | 1730pF @ 25V | 410pF @ 25V |
| Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
| Serie | Automotive, AEC-Q101, OptiMOS™ | Automotive, AEC-Q101, OptiMOS™ | OptiMOS™ | Automotive, AEC-Q101, OptiMOS™ |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A | 20A | 20A | 20A |
| Supplier Device Package | PG-TDSON-8-4 | PG-TDSON-8-10 | PG-TDSON-8-4 | PG-TDSON-8-10 |
| Basis Produktnummer | IPG20N | IPG20N | IPG20N | IPG20N |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| FET Feature | - | - | Logic Level Gate | Logic Level Gate |
Eroflueden IPG20N06S415ATMA2 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPG20N06S415ATMA2 - Infineon Technologies.
IPG20N06S415AATMA1Infineon TechnologiesMOSFET 2N-CH 60V 20A 8TDSONIPG20N06S4L-14Cypress Semiconductor (Infineon Technologies)IPG20N06S4-15ACypress Semiconductor (Infineon Technologies)IPG20N06S4C-14ACypress Semiconductor (Infineon Technologies)IPG20N06S3L-35Infineon TechnologiesMOSFET 2N-CH 55V 20A TDSON-8IPG20N06S3L-45Cypress Semiconductor (Infineon Technologies)IPG20N06S2L65AATMA1Infineon TechnologiesMOSFET 2N-CH 55V 20A 8TDSONIPG20N06S4L-26Cypress Semiconductor (Infineon Technologies)IPG20N06S4L-11Cypress Semiconductor (Infineon Technologies)IPG20N06S4L-26 MOSCypress Semiconductor (Infineon Technologies)IPG20N06S4L-26ACypress Semiconductor (Infineon Technologies)IPG20N06S4L-11ACypress Semiconductor (Infineon Technologies)IPG20N06S4-15A MOSCypress Semiconductor (Infineon Technologies)IPG20N06S4-15Cypress Semiconductor (Infineon Technologies)IPG20N06S3L-23Infineon TechnologiesMOSFET 2N-CH 55V 20A TDSON-8IPG20N06S2L65ATMA1InfineonIPG20N06S4L11ATMA1Infineon TechnologiesMOSFET 2N-CH 8TDSONIPG20N06S4L-14ACypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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