IPD85P04P4L06ATMA1 Tech Spezifikatioune
Infineon Technologies - IPD85P04P4L06ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD85P04P4L06ATMA1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.2V @ 150µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO252-3-313 | |
Serie | Automotive, AEC-Q101, OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 85A, 10V | |
Power Dissipation (Max) | 88W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6580 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) | |
Basis Produktnummer | IPD85P04 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
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Part Number | IPD85P04P4L06ATMA1 | IPD900P06NMATMA1 | IPD85P04P407ATMA1 | IPD85P04P4L06ATMA2 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V | 27 nC @ 10 V | 89 nC @ 10 V | 104 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 40 V | 60 V | 40 V | 40 V |
Vgs (th) (Max) @ Id | 2.2V @ 150µA | 4V @ 710µA | 4V @ 150µA | 2.2V @ 150µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) | 16.4A (Tc) | 85A (Tc) | 85A (Tc) |
Vgs (Max) | ±16V | ±20V | ±20V | +5V, -16V |
Serie | Automotive, AEC-Q101, OptiMOS™ | OptiMOS™ | Automotive, AEC-Q101, OptiMOS™ | OptiMOS®-P2 |
Input Capacitance (Ciss) (Max) @ Vds | 6580 pF @ 25 V | 1100 pF @ 30 V | 6085 pF @ 25 V | 6580 pF @ 25 V |
Basis Produktnummer | IPD85P04 | IPD90 | IPD85P04 | IPD85P04 |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | PG-TO252-3-313 | PG-TO252-3-313 | PG-TO252-3-313 | PG-TO252-3-313 |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Power Dissipation (Max) | 88W (Tc) | 63W (Tc) | 88W (Tc) | 88W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 85A, 10V | 90mOhm @ 16.4A, 10V | 7.3mOhm @ 85A, 10V | 6.4mOhm @ 85A, 10V |
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Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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