IPD80R1K2P7ATMA1 Tech Spezifikatioune
Infineon Technologies - IPD80R1K2P7ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD80R1K2P7ATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.5V @ 80µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO252-3 | |
Serie | CoolMOS™ P7 | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V | |
Power Dissipation (Max) | 37W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 500 V | |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A (Tc) | |
Basis Produktnummer | IPD80R1 |
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Produktiounsattriff | ||||
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Part Number | IPD80R1K2P7ATMA1 | IPD80R280P7ATMA1 | IPD80R1K4CEATMA1 | IPD80P03P4L-07 4P03L07 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
Supplier Device Package | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 | - |
Serie | CoolMOS™ P7 | CoolMOS™ | CoolMOS™ | - |
Entworf fir Source Voltage (Vdss) | 800 V | 800 V | 800 V | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | 36 nC @ 10 V | 23 nC @ 10 V | - |
Basis Produktnummer | IPD80R1 | IPD80R | IPD80R1 | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A (Tc) | 17A (Tc) | 3.9A (Tc) | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 500 V | 1200 pF @ 500 V | 570 pF @ 100 V | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
Power Dissipation (Max) | 37W (Tc) | 101W (Tc) | 63W (Tc) | - |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V | 280mOhm @ 7.2A, 10V | 1.4Ohm @ 2.3A, 10V | - |
Vgs (th) (Max) @ Id | 3.5V @ 80µA | 3.5V @ 360µA | 3.9V @ 240µA | - |
Eroflueden IPD80R1K2P7ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD80R1K2P7ATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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