IPD70R2K0CEAUMA1 Tech Spezifikatioune
Infineon Technologies - IPD70R2K0CEAUMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD70R2K0CEAUMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 70µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO252-3 | |
| Serie | CoolMOS™ CE | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 10V | |
| Power Dissipation (Max) | 42W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 163 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 700 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
| Basis Produktnummer | IPD70 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPD70R2K0CEAUMA1.
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|---|---|---|---|---|
| Part Number | IPD70R2K0CEAUMA1 | IPD70R1K4P7SAUMA1 | IPD70R900P7SAUMA1 | IPD70P04P4L08ATMA2 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Power Dissipation (Max) | 42W (Tc) | 23W (Tc) | 30.5W (Tc) | 75W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 4A (Tc) | 6A (Tc) | 70A (Tc) |
| Entworf fir Source Voltage (Vdss) | 700 V | 700 V | 700 V | 40 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±16V | ±16V | +5V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 163 pF @ 100 V | 158 pF @ 400 V | 211 pF @ 400 V | 5430 pF @ 25 V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | IPD70 | IPD70 | IPD70 | IPD70 |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3-313 |
| Serie | CoolMOS™ CE | CoolMOS™ P7 | CoolMOS™ P7 | OptiMOS®-P2 |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 10V | 1.4Ohm @ 700mA, 10V | 900mOhm @ 1.1A, 10V | 7.8mOhm @ 70A, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 70µA | 3.5V @ 40µA | 3.5V @ 60µA | 2.2V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V | 4.7 nC @ 10 V | 6.8 nC @ 10 V | 92 nC @ 10 V |
Eroflueden IPD70R2K0CEAUMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD70R2K0CEAUMA1 - Infineon Technologies.
IPD70R2K0CECypress Semiconductor (Infineon Technologies)IPD70R360P7SAUMA1Infineon
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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