IPD60R1K5CEAUMA1 Tech Spezifikatioune
Infineon Technologies - IPD60R1K5CEAUMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD60R1K5CEAUMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 90µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO252-3 | |
| Serie | CoolMOS™ CE | |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V | |
| Power Dissipation (Max) | 49W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
| Basis Produktnummer | IPD60R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPD60R1K5CEAUMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPD60R1K5CEAUMA1 | IPD60R1K4C6 | IPD60R180P7ATMA1 | IPD60R1K0CEAUMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V | 200 pF @ 100 V | 1081 pF @ 400 V | 280 pF @ 100 V |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3-344 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 3.2A (Tc) | 18A (Tc) | 6.8A (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 3.5V @ 90µA | 3.5V @ 90µA | 4V @ 280µA | 3.5V @ 130µA |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V | 1.4Ohm @ 1.1A, 10V | 180mOhm @ 5.6A, 10V | 1Ohm @ 1.5A, 10V |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Basis Produktnummer | IPD60R | IPD60R | IPD60R | IPD60R |
| Power Dissipation (Max) | 49W (Tc) | 28.4W (Tc) | 72W (Tc) | 61W (Tc) |
| Serie | CoolMOS™ CE | CoolMOS™ C6 | CoolMOS™ P7 | CoolMOS™ CE |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V | 9.4 nC @ 10 V | 25 nC @ 10 V | 13 nC @ 10 V |
Eroflueden IPD60R1K5CEAUMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD60R1K5CEAUMA1 - Infineon Technologies.
IPD60R280P7Cypress Semiconductor (Infineon Technologies)IPD60R280P7SAUMA1InfineonIPD60R1K4C6Infineon TechnologiesMOSFET N-CH 600V 3.2A TO252-3IPD60R180P7ATMA1Infineon TechnologiesMOSFET N-CH 600V 18A TO252-3IPD60R280CFD7Cypress Semiconductor (Infineon Technologies)IPD60R280CFD7ATMA1InfineonIPD60R1K0CEAUMA1Infineon TechnologiesMOSFET N-CH 600V 6.8A 61W TO252IPD60R180P7SCypress Semiconductor (Infineon Technologies)IPD60R280P7SCypress Semiconductor (Infineon Technologies)IPD60R2K0C6Cypress Semiconductor (Infineon Technologies)IPD60R1K5CECypress Semiconductor (Infineon Technologies)
IPD60R1K4C6BTMA1INENOIIPD60R210PFD7STO-252IPD60R2K1CECypress Semiconductor (Infineon Technologies)IPD60R1K0CECypress Semiconductor (Infineon Technologies)IPD60R280R7Cypress Semiconductor (Infineon Technologies)IPD60R1K4C6 MOSCypress Semiconductor (Infineon Technologies)IPD60R180P7SAUMA1Infineon TechnologiesMOSFET N-CH 600V 18A TO252-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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