IPD50R520CP Tech Spezifikatioune
Infineon Technologies - IPD50R520CP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD50R520CP
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO252-3-11 | |
| Serie | CoolMOS™ CP | |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V | |
| Power Dissipation (Max) | 66W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.1A (Tc) | |
| Basis Produktnummer | IPD50R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPD50R520CP.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | IPD50R520CP | IPD50R399CPATMA1 | IPD50R800CE | IPD50R399CP |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Power Dissipation (Max) | 66W (Tc) | 83W (Tc) | 60W (Tc) | 83W (Tc) |
| Supplier Device Package | PG-TO252-3-11 | PG-TO252-3-313 | PG-TO252-3-344 | PG-TO252-3-11 |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V | 399mOhm @ 4.9A, 10V | 800mOhm @ 1.5A, 13V | 399mOhm @ 4.9A, 10V |
| FET Feature | - | - | - | - |
| Serie | CoolMOS™ CP | CoolMOS™ CP | CoolMOS™ CE | CoolMOS™ CP |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 13V | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V | 890 pF @ 100 V | 280 pF @ 100 V | 890 pF @ 100 V |
| Basis Produktnummer | IPD50R | IPD50R | IPD50 | IPD50R |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 500 V | 500 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.1A (Tc) | 9A (Tc) | 7.6A (Tc) | 9A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | 3.5V @ 330µA | 3.5V @ 130µA | 3.5V @ 330µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 23 nC @ 10 V | 12.4 nC @ 10 V | 23 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden IPD50R520CP PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD50R520CP - Infineon Technologies.
IPD50R399CPATMA1Infineon TechnologiesLOW POWER_LEGACYIPD50R800CEInfineon TechnologiesIPD50R800 - 500V COOLMOS N-CHANNIPD50R399CP 5R399PCypress Semiconductor (Infineon Technologies)IPD50R650CE 5R650CECypress Semiconductor (Infineon Technologies)IPD50R399CPInfineon TechnologiesMOSFET N-CH 500V 9A TO252-3IPD50R520CP 5R520PCypress Semiconductor (Infineon Technologies)IPD50R399CP MOSCypress Semiconductor (Infineon Technologies)IPD530N15N3GCypress Semiconductor (Infineon Technologies)IGBT ModuleIPD50R950CE 5R950CECypress Semiconductor (Infineon Technologies)IPD50R500CEInfineon TechnologiesIPD50R500 - 500V COOLMOS N-CHANNIPD50R3K0CEAUMA1Infineon TechnologiesMOSFET N-CH 500V 1.7A TO252-3IPD530N15N3InfineonIPD50R520CPATMA1Infineon TechnologiesLOW POWER_LEGACY
IPD50R380CFINFIPD50R950CEAUMA1Infineon TechnologiesCONSUMERIPD50R950CECypress Semiconductor (Infineon Technologies)IPD50R500CEAUMA1Infineon TechnologiesMOSFET N-CH 500V 7.6A TO252IPD50R3K0CECypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.