IPD50N03S2L06ATMA1 Tech Spezifikatioune
Infineon Technologies - IPD50N03S2L06ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD50N03S2L06ATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 85µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO252-3-11 | |
Serie | Automotive, AEC-Q101, OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 50A, 10V | |
Power Dissipation (Max) | 136W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | IPD50 |
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Produktiounsattriff | ||||
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Part Number | IPD50N03S2L06ATMA1 | IPD50N03S2-07 | IPD50N03S207ATMA1 | IPD50N03S4L06ATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
FET Feature | - | - | - | - |
Supplier Device Package | PG-TO252-3-11 | PG-TO252-3-1 | PG-TO252-3-11 | PG-TO252-3-11 |
Power Dissipation (Max) | 136W (Tc) | 136W (Tc) | 136W (Tc) | 56W (Tc) |
Serie | Automotive, AEC-Q101, OptiMOS™ | OptiMOS™ | OptiMOS™ | Automotive, AEC-Q101, OptiMOS™ |
Vgs (th) (Max) @ Id | 2V @ 85µA | 4V @ 85µA | 4V @ 85µA | 2.2V @ 20µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±16V |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | 68 nC @ 10 V | 68 nC @ 10 V | 31 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 4.5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | 2000 pF @ 25 V | 2000 pF @ 25 V | 2330 pF @ 25 V |
Basis Produktnummer | IPD50 | IPD50 | IPD50 | IPD50 |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 50A, 10V | 7.3mOhm @ 50A, 10V | 7.3mOhm @ 50A, 10V | 5.5mOhm @ 50A, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 50A (Tc) | 50A (Tc) | 50A (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Eroflueden IPD50N03S2L06ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD50N03S2L06ATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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