IPD30N06S4L23ATMA1 Tech Spezifikatioune
Infineon Technologies - IPD30N06S4L23ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD30N06S4L23ATMA1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.2V @ 10µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO252-3-11 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 30A, 10V | |
Power Dissipation (Max) | 36W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | |
Basis Produktnummer | IPD30N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPD30N06S4L23ATMA1.
Produktiounsattriff | ||||
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Part Number | IPD30N06S4L23ATMA1 | IPD30N06S2L13ATMA4 | IPD30N06S4L23ATMA2 | IPD30N06S3L-20 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 5V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 69 nC @ 10 V | 21 nC @ 10 V | 37 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Supplier Device Package | PG-TO252-3-11 | PG-TO252-3-11 | PG-TO252-3-11 | PG-TO252-3-11 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 30A (Tc) | 30A (Tc) | 30A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V | 1800 pF @ 25 V | 1560 pF @ 25 V | 2600 pF @ 25 V |
Vgs (Max) | ±16V | ±20V | ±16V | ±16V |
Vgs (th) (Max) @ Id | 2.2V @ 10µA | 2V @ 80µA | 2.2V @ 10µA | 2.2V @ 20µA |
Serie | OptiMOS™ | OptiMOS™ | Automotive, AEC-Q101, OptiMOS™ | OptiMOS® |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 23mOhm @ 30A, 10V | 13mOhm @ 30A, 10V | 23mOhm @ 30A, 10V | 20mOhm @ 17A, 10V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 36W (Tc) | 136W (Tc) | 36W (Tc) | 45W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 60 V | 55 V | 60 V | 55 V |
Basis Produktnummer | IPD30N | IPD30N06 | IPD30N06 | - |
Eroflueden IPD30N06S4L23ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD30N06S4L23ATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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