IPD10N03LA Tech Spezifikatioune
Infineon Technologies - IPD10N03LA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD10N03LA
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 20µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO252-3-11 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 52W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1358 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 25 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | |
| Basis Produktnummer | IPD10N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPD10N03LA.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPD10N03LA | IPD110N12N3GATMA1 | IPD100N04S402ATMA1 | IPD120N06S4-03 4N0603 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Basis Produktnummer | IPD10N | IPD110 | IPD100 | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Entworf fir Source Voltage (Vdss) | 25 V | 120 V | 40 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 75A (Tc) | 100A (Tc) | - |
| Vgs (th) (Max) @ Id | 2V @ 20µA | 3V @ 83µA (Typ) | 4V @ 95µA | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | - |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1358 pF @ 15 V | 4310 pF @ 60 V | 9430 pF @ 25 V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | - |
| Supplier Device Package | PG-TO252-3-11 | PG-TO252-3 | PG-TO252-3-313 | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V | 65 nC @ 10 V | 118 nC @ 10 V | - |
| Power Dissipation (Max) | 52W (Tc) | 136W (Tc) | 150W (Tc) | - |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 30A, 10V | 11mOhm @ 75A, 10V | 2mOhm @ 100A, 10V | - |
Eroflueden IPD10N03LA PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD10N03LA - Infineon Technologies.
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IPD105N04LINFIPD105N04LGCypress Semiconductor (Infineon Technologies)IPD100N06S403ATMA2InfineonIPD122N10N3Cypress Semiconductor (Infineon Technologies)IPD10N03LA MOSCypress Semiconductor (Infineon Technologies)IPD105N03LG MOSCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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