IPC100N04S51R9ATMA1 Tech Spezifikatioune
Infineon Technologies - IPC100N04S51R9ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPC100N04S51R9ATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.4V @ 50µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-34 | |
| Serie | Automotive, AEC-Q101, OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 100W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 7V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
| Basis Produktnummer | IPC100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPC100N04S51R9ATMA1.
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| Part Number | IPC100N04S51R9ATMA1 | IPC100N04S5L1R9ATMA1 | IPC100N04S52R8ATMA1 | IPC100N04S5L1R1ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 25 V | 4310 pF @ 25 V | 2600 pF @ 25 V | 8250 pF @ 25 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 7V, 10V | 4.5V, 10V | 7V, 10V | 4.5V, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
| Supplier Device Package | PG-TDSON-8-34 | PG-TDSON-8-34 | PG-TDSON-8-34 | PG-TDSON-8-34 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 100A (Tc) | 100A (Tc) | 100A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Power Dissipation (Max) | 100W (Tc) | 100W (Tc) | 75W (Tc) | 150W (Tc) |
| Serie | Automotive, AEC-Q101, OptiMOS™ | OptiMOS™ | OptiMOS™ | Automotive, AEC-Q101, OptiMOS™ |
| Basis Produktnummer | IPC100 | IPC100 | IPC100 | IPC100 |
| Vgs (th) (Max) @ Id | 3.4V @ 50µA | 2V @ 50µA | 3.4V @ 30µA | 2V @ 90µA |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±16V | ±20V | ±16V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 50A, 10V | 1.9mOhm @ 50A, 10V | 2.8mOhm @ 50A, 10V | 1.1mOhm @ 50A, 10V |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | 81 nC @ 10 V | 45 nC @ 10 V | 140 nC @ 10 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden IPC100N04S51R9ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPC100N04S51R9ATMA1 - Infineon Technologies.
IPC100N04S5-2R8Cypress Semiconductor (Infineon Technologies)IPC100N04S5-1R2Cypress Semiconductor (Infineon Technologies)IPC100N04S5L1R5ATMA1IPC100N04S5L-1R5Cypress Semiconductor (Infineon Technologies)IPC100N04S5L-2R6Cypress Semiconductor (Infineon Technologies)IPC100N04S5-1R2ATMA1Cypress Semiconductor (Infineon Technologies)IPC100N04S5-1R7Cypress Semiconductor (Infineon Technologies)IPC100N04S5-5R1Cypress Semiconductor (Infineon Technologies)IPC100N04S5L1R9ATMA1Infineon TechnologiesMOSFET N-CH 40V 100A 8TDSON-34IPC100N04S5-1R2 MOSCypress Semiconductor (Infineon Technologies)IPC100N04S5-1R9INFIEONIPC100N04S5L-1R1Cypress Semiconductor (Infineon Technologies)IPC100N04S52R8ATMA1Infineon TechnologiesMOSFET N-CH 40V 100A 8TDSON-34IPC100N04S5L1R1ATMA1Infineon TechnologiesMOSFET N-CH 40V 100A 8TDSON-34IPC100N04S51R7ATMA1Infineon TechnologiesMOSFET N-CH 40V 100A 8TDSON-34IPC100N04S5L-1R9Cypress Semiconductor (Infineon Technologies)IPC100N04S52R8Cypress Semiconductor (Infineon Technologies)IPC100N04S51R2ATMA1Infineon TechnologiesMOSFET N-CH 40V 100A 8TDSON-34| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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