IPBE65R050CFD7AATMA1 Tech Spezifikatioune
Infineon Technologies - IPBE65R050CFD7AATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPBE65R050CFD7AATMA1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4.5V @ 1.24mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-7-3-10 | |
Serie | Automotive, AEC-Q101, CoolMOS™ CFD7A | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 24.8A, 10V | |
Power Dissipation (Max) | 227W (Tc) | |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4975 pF @ 400 V | |
Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | |
Basis Produktnummer | IPBE65 |
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Produktiounsattriff | ||||
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Part Number | IPBE65R050CFD7AATMA1 | IPB90R340C3ATMA2 | IPB90N04S402ATMA1 | IPB90R340C3ATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Basis Produktnummer | IPBE65 | IPB90R340 | IPB90N04 | IPB90R |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 227W (Tc) | 208W (Tc) | 150W (Tc) | 208W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-7-3-10 | PG-TO263-3-2 | PG-TO263-3 | PG-TO263-3 |
Vgs (th) (Max) @ Id | 4.5V @ 1.24mA | 3.5V @ 1mA | 4V @ 95µA | 3.5V @ 1mA |
Entworf fir Source Voltage (Vdss) | 650 V | 900 V | 40 V | 900 V |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 4975 pF @ 400 V | 2400 pF @ 100 V | 9430 pF @ 25 V | 2400 pF @ 100 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | Automotive, AEC-Q101, CoolMOS™ CFD7A | CoolMOS™ | OptiMOS™ | CoolMOS™ |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | 15A (Tc) | 90A (Tc) | 15A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V | 94 nC @ 10 V | 118 nC @ 10 V | 94 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 50mOhm @ 24.8A, 10V | 340mOhm @ 9.2A, 10V | 2.1mOhm @ 90A, 10V | 340mOhm @ 9.2A, 10V |
Eroflueden IPBE65R050CFD7AATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPBE65R050CFD7AATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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