IPB80N06S209ATMA1 Tech Spezifikatioune
Infineon Technologies - IPB80N06S209ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB80N06S209ATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 125µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3-2 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 8.8mOhm @ 50A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2360 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | IPB80N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB80N06S209ATMA1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IPB80N06S209ATMA1 | IPB80N06S2L-11 | IPB80N06S2L-H5 | IPB80N06S205ATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 8.8mOhm @ 50A, 10V | 11mOhm @ 40A, 10V | 4.7mOhm @ 80A, 10V | 4.8mOhm @ 80A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | OptiMOS™ | CoolMOS™ | OptiMOS™ | OptiMOS™ |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 55 V | 55 V |
Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
Input Capacitance (Ciss) (Max) @ Vds | 2360 pF @ 25 V | 2075 pF @ 25 V | 5000 pF @ 25 V | 5110 pF @ 25 V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
Vgs (th) (Max) @ Id | 4V @ 125µA | 2V @ 93µA | 2V @ 250µA | 4V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | IPB80N | - | IPB80N | IPB80N |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | 80 nC @ 10 V | 190 nC @ 10 V | 170 nC @ 10 V |
Power Dissipation (Max) | 190W (Tc) | 158W (Tc) | 300W (Tc) | 300W (Tc) |
Eroflueden IPB80N06S209ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB80N06S209ATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.