IPB60R520CP Tech Spezifikatioune
Infineon Technologies - IPB60R520CP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB60R520CP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3-2 | |
Serie | CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V | |
Power Dissipation (Max) | 66W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB60R520CP.
Produktiounsattriff | ||||
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Part Number | IPB60R520CP | IPB60R600CP | IPB64N25S320ATMA1 | IPB60R385CP |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 250 V | 600 V |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 100 V | 550 pF @ 100 V | 7000 pF @ 25 V | 790 pF @ 100 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | 27 nC @ 10 V | 89 nC @ 10 V | 22 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V | 600mOhm @ 3.3A, 10V | 20mOhm @ 64A, 10V | 385mOhm @ 5.2A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | 3.5V @ 220µA | 4V @ 270µA | 3.5V @ 340µA |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Bulk |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 66W (Tc) | 60W (Tc) | 300W (Tc) | 83W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Tc) | 6.1A (Tc) | 64A (Tc) | 9A (Tc) |
Serie | CoolMOS™ | CoolMOS™ | OptiMOS™ | CoolMOS™ |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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