IPB45N04S4L-08 Tech Spezifikatioune
Infineon Technologies - IPB45N04S4L-08 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB45N04S4L-08
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.2V @ 17µA | |
Vgs (Max) | +20V, -16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3-2 | |
Serie | OptiMOS™T2 | |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 45A, 10V | |
Power Dissipation (Max) | 45W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB45N04S4L-08.
Produktiounsattriff | ||||
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Part Number | IPB45N04S4L-08 | IPB45N06S3L-13 | IPB45N06S3-16 | IPB45N06S4L08ATMA3 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Vgs (th) (Max) @ Id | 2.2V @ 17µA | 2.2V @ 30µA | 4V @ 30µA | 2.2V @ 35µA |
Vgs (Max) | +20V, -16V | ±16V | ±20V | ±16V |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 45A, 10V | 13.1mOhm @ 26A, 10V | 15.4mOhm @ 23A, 10V | 7.9mOhm @ 45A, 10V |
Entworf fir Source Voltage (Vdss) | 40 V | 55 V | 55 V | 60 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 45W (Tc) | 65W (Tc) | 65W (Tc) | 71W (Tc) |
Serie | OptiMOS™T2 | OptiMOS™ | OptiMOS™ | OptiMOS®-T2 |
Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V | 3600 pF @ 25 V | 2980 pF @ 25 V | 4780 pF @ 25 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 75 nC @ 10 V | 57 nC @ 10 V | 64 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | 45A (Tc) | 45A (Tc) | 45A (Tc) |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 5V, 10V | 10V | 4.5V, 10V |
Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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