IPB200N15N3 Tech Spezifikatioune
Infineon Technologies - IPB200N15N3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB200N15N3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 90µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-3-2 | |
| Serie | OptiMOS™ 3 | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 150W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 75 V | |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB200N15N3.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | IPB200N15N3 | IPB180P04P4L02ATMA1 | IPB200N25N3GATMA1 | IPB200N15N3G |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V | 2.4mOhm @ 100A, 10V | 20mOhm @ 64A, 10V | 20mOhm @ 50A, 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Serie | OptiMOS™ 3 | OptiMOS™ | OptiMOS™ | OptiMOS™ 3 |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | 286 nC @ 10 V | 86 nC @ 10 V | 31 nC @ 10 V |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 75 V | 18700 pF @ 25 V | 7100 pF @ 100 V | 1820 pF @ 75 V |
| Vgs (Max) | ±20V | ±16V | ±20V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 150 V | 40 V | 250 V | 150 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 180A (Tc) | 64A (Tc) | 50A (Tc) |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-7-3 | PG-TO263-3 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 150W (Tc) | 150W (Tc) | 300W (Tc) | 150W (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 90µA | 2.2V @ 410µA | 4V @ 270µA | 4V @ 90µA |
| Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | 4.5V, 10V | 10V | 8V, 10V |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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