IPB120N04S3-02 Tech Spezifikatioune
Infineon Technologies - IPB120N04S3-02 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB120N04S3-02
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 230µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-3 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 300W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 14300 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
| Basis Produktnummer | IPB120N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB120N04S3-02.
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|---|---|---|---|---|
| Part Number | IPB120N04S3-02 | IPB120N04S401ATMA1 | IPB117N20NFDATMA1 | IPB120N04S402ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 120A (Tc) | 84A (Tc) | 120A (Tc) |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V | 1.5mOhm @ 100A, 10V | 11.7mOhm @ 84A, 10V | 1.8mOhm @ 100A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 14300 pF @ 25 V | 14000 pF @ 25 V | 6650 pF @ 100 V | 10740 pF @ 25 V |
| Vgs (th) (Max) @ Id | 4V @ 230µA | 4V @ 140µA | 4V @ 270µA | 4V @ 110µA |
| FET Feature | - | - | - | - |
| Basis Produktnummer | IPB120N | IPB120 | IPB117 | IPB120 |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 200 V | 40 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3-2 | PG-TO263-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Power Dissipation (Max) | 300W (Tc) | 188W (Tc) | 300W (Tc) | 158W (Tc) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | 176 nC @ 10 V | 87 nC @ 10 V | 134 nC @ 10 V |
Eroflueden IPB120N04S3-02 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB120N04S3-02 - Infineon Technologies.
IPB120N06NGCypress Semiconductor (Infineon Technologies)IGBT ModuleIPB117N20NFD MOSCypress Semiconductor (Infineon Technologies)IPB120N04S401ATMA1Infineon TechnologiesMOSFET N-CH 40V 120A D2PAKIPB120N04S4-01Cypress Semiconductor (Infineon Technologies)IPB117N20NFDATMA1Infineon TechnologiesMOSFET N-CH 200V 84A TO263-3IPB120N06S4Cypress Semiconductor (Infineon Technologies)IPB120N04S402ATMA1Infineon TechnologiesMOSFET N-CH 40V 120A D2PAKIPB117N20NFDCypress Semiconductor (Infineon Technologies)
IPB110P06LMINFIPB120N04S4L-02Cypress Semiconductor (Infineon Technologies)IPB120N04S4L02ATMA1Infineon TechnologiesMOSFET N-CH 40V 120A D2PAKIPB120N03S4L03ATMA1Infineon TechnologiesMOSFET N-CH 30V 120A D2PAKIPB117N20NFINFINEOIPB120N04S4-04Cypress Semiconductor (Infineon Technologies)IPB110P06LMATMA1Infineon TechnologiesMOSFET P-CH 60V 100A TO263-3IPB11N03LAInfineon TechnologiesMOSFET N-CH 25V 30A TO263-3IPB114N03LGCypress Semiconductor (Infineon Technologies)IPB120N04S4-02Cypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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