IPB107N20N3GATMA1 Tech Spezifikatioune
Infineon Technologies - IPB107N20N3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB107N20N3GATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 270µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 10.7mOhm @ 88A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 88A (Tc) | |
Basis Produktnummer | IPB107 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB107N20N3GATMA1.
Produktiounsattriff | ||||
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Part Number | IPB107N20N3GATMA1 | IPB108N15N3GATMA1 | IPB107N20NAATMA1 | IPB108N15N3G |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Entworf fir Source Voltage (Vdss) | 200 V | 150 V | 200 V | - |
Power Dissipation (Max) | 300W (Tc) | 214W (Tc) | 300W (Tc) | - |
Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V | 3230 pF @ 75 V | 7100 pF @ 100 V | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V | 55 nC @ 10 V | 87 nC @ 10 V | - |
Basis Produktnummer | IPB107 | IPB108 | IPB107 | - |
Vgs (th) (Max) @ Id | 4V @ 270µA | 4V @ 160µA | 4V @ 270µA | - |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 8V, 10V | 10V | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Rds On (Max) @ Id, Vgs | 10.7mOhm @ 88A, 10V | 10.8mOhm @ 83A, 10V | 10.7mOhm @ 88A, 10V | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 88A (Tc) | 83A (Tc) | 88A (Tc) | - |
Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | - |
Eroflueden IPB107N20N3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB107N20N3GATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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