IPB083N15N5LFATMA1 Tech Spezifikatioune
Infineon Technologies - IPB083N15N5LFATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB083N15N5LFATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4.9V @ 134µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 8.3mOhm @ 100A, 10V | |
Power Dissipation (Max) | 179W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 105A (Tc) | |
Basis Produktnummer | IPB083 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB083N15N5LFATMA1.
Produktiounsattriff | ||||
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Part Number | IPB083N15N5LFATMA1 | IPB081N06L3GATMA1 | IPB090N06N3GATMA1 | IPB093N04LG |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 29 nC @ 4.5 V | 36 nC @ 10 V | 28 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ 3 |
Power Dissipation (Max) | 179W (Tc) | 79W (Tc) | 71W (Tc) | 47W (Tc) |
Rds On (Max) @ Id, Vgs | 8.3mOhm @ 100A, 10V | 8.1mOhm @ 50A, 10V | 9mOhm @ 50A, 10V | 9.3mOhm @ 50A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Entworf fir Source Voltage (Vdss) | 150 V | 60 V | 60 V | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 75 V | 4900 pF @ 30 V | 2900 pF @ 30 V | 2100 pF @ 20 V |
Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | PG-TO-263-3-2 |
Basis Produktnummer | IPB083 | IPB081 | IPB090 | - |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 105A (Tc) | 50A (Tc) | 50A (Tc) | 50A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 4.5V, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 4.9V @ 134µA | 2.2V @ 34µA | 4V @ 34µA | 2V @ 77µA |
Eroflueden IPB083N15N5LFATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB083N15N5LFATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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