IPB065N15N3GE8187ATMA1 Tech Spezifikatioune
Infineon Technologies - IPB065N15N3GE8187ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB065N15N3GE8187ATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 270µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-7 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 100A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | |
Basis Produktnummer | IPB065N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB065N15N3GE8187ATMA1.
Produktiounsattriff | ||||
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Part Number | IPB065N15N3GE8187ATMA1 | IPB065N15N3GATMA1 | IPB065N10N3GATMA1 | IPB067N08N3GATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | 93 nC @ 10 V | 64 nC @ 10 V | 56 nC @ 10 V |
Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | 150W (Tc) | 136W (Tc) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 75 V | 7300 pF @ 75 V | 4910 pF @ 50 V | 3840 pF @ 40 V |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 100A, 10V | 6.5mOhm @ 100A, 10V | 6.5mOhm @ 80A, 10V | 6.7mOhm @ 73A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 150 V | 150 V | 100 V | 80 V |
Supplier Device Package | PG-TO263-7 | PG-TO263-7 | PG-TO263-3 | PG-TO263-3 |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | 130A (Tc) | 80A (Tc) | 80A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | 8V, 10V | 6V, 10V | 6V, 10V |
Vgs (th) (Max) @ Id | 4V @ 270µA | 4V @ 270µA | 3.5V @ 90µA | 3.5V @ 73µA |
Basis Produktnummer | IPB065N | IPB065 | IPB065 | IPB067 |
Eroflueden IPB065N15N3GE8187ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB065N15N3GE8187ATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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