IPB054N06N3GATMA1 Tech Spezifikatioune
Infineon Technologies - IPB054N06N3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB054N06N3GATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 58µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 80A, 10V | |
Power Dissipation (Max) | 115W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | IPB054 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB054N06N3GATMA1.
Produktiounsattriff | ||||
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Part Number | IPB054N06N3GATMA1 | IPB057N06NATMA1 | IPB054N06N3G | IPB052N04NG |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ 3 | OptiMOS™ 3 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 30 V | 2000 pF @ 30 V | 6600 pF @ 30 V | 3300 pF @ 20 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | IPB054 | IPB057 | - | - |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 115W (Tc) | 3W (Ta), 83W (Tc) | 115W (Tc) | 79W (Tc) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4V @ 58µA | 2.8V @ 36µA | 4V @ 58µA | 4V @ 33µA |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 40 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 17A (Ta), 45A (Tc) | 80A (Tc) | 70A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V | 27 nC @ 10 V | 82 nC @ 10 V | 42 nC @ 10 V |
Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3-2 | PG-TO-263-3-2 |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 80A, 10V | 5.7mOhm @ 45A, 10V | 5.7mOhm @ 80A, 10V | 5.2mOhm @ 70A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 6V, 10V | 10V | 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden IPB054N06N3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB054N06N3GATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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