IPB024N08N5ATMA1 Tech Spezifikatioune
Infineon Technologies - IPB024N08N5ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB024N08N5ATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.8V @ 154µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V | |
Power Dissipation (Max) | 214W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 40 V | |
Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | IPB024 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB024N08N5ATMA1.
Produktiounsattriff | ||||
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Part Number | IPB024N08N5ATMA1 | IPB023N04NG | IPB025N10N3GATMA1 | IPB025N08N3GATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 40 V | 10000 pF @ 20 V | 14800 pF @ 50 V | 14200 pF @ 40 V |
Power Dissipation (Max) | 214W (Tc) | 167W (Tc) | 300W (Tc) | 300W (Tc) |
FET Feature | - | - | - | - |
Serie | OptiMOS™ | OptiMOS™3 | OptiMOS™ | OptiMOS™ |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 3.8V @ 154µA | 4V @ 95µA | 3.5V @ 275µA | 3.5V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V | 120 nC @ 10 V | 206 nC @ 10 V | 206 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 6V, 10V | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V | 2.3mOhm @ 90A, 10V | 2.5mOhm @ 100A, 10V | 2.5mOhm @ 100A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | IPB024 | - | IPB025 | IPB025 |
Entworf fir Source Voltage (Vdss) | 80 V | 40 V | 100 V | 80 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 90A (Tc) | 180A (Tc) | 120A (Tc) |
Supplier Device Package | PG-TO263-3 | PG-TO263-3-2 | PG-TO263-7 | PG-TO263-3 |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Eroflueden IPB024N08N5ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB024N08N5ATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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