IPB019N08N3GATMA1 Tech Spezifikatioune
Infineon Technologies - IPB019N08N3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB019N08N3GATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 270µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-7 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V | |
| Power Dissipation (Max) | 300W (Tc) | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 14200 pF @ 40 V | |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 80 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | |
| Basis Produktnummer | IPB019 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB019N08N3GATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPB019N08N3GATMA1 | IPB019N06L3GATMA1 | IPB020N10N5ATMA1 | IPB020N08N5ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V | 1.9mOhm @ 100A, 10V | 2mOhm @ 100A, 10V | 2mOhm @ 100A, 10V |
| Supplier Device Package | PG-TO263-7 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V | 166 nC @ 4.5 V | 210 nC @ 10 V | 166 nC @ 10 V |
| Entworf fir Source Voltage (Vdss) | 80 V | 60 V | 100 V | 80 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | 120A (Tc) | 120A (Tc) | 120A (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 14200 pF @ 40 V | 28000 pF @ 30 V | 15600 pF @ 50 V | 12100 pF @ 40 V |
| FET Feature | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 4.5V, 10V | 6V, 10V | 6V, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 270µA | 2.2V @ 196µA | 3.8V @ 270µA | 3.8V @ 208µA |
| Basis Produktnummer | IPB019 | IPB019 | IPB020 | IPB020 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 300W (Tc) | 250W (Tc) | 375W (Tc) | 300W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
Eroflueden IPB019N08N3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB019N08N3GATMA1 - Infineon Technologies.
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IPB020N08N5AKSA1ICIPB019N08N3GCypress Semiconductor (Infineon Technologies)IPB020N10N5Cypress Semiconductor (Infineon Technologies)IPB020N04NGCypress Semiconductor (Infineon Technologies)IPB020N10N5LFATMA1InfineonIPB020N10N5ATMA1Infineon TechnologiesMOSFET N-CH 100V 120A D2PAKIPB019N05N5GCypress Semiconductor (Infineon Technologies)IPB020N08N5ATMA1Infineon TechnologiesMOSFET N-CH 80V 120A D2PAKIPB020N08N5Cypress Semiconductor (Infineon Technologies)IPB017N10N5LFATMA1InfineonIPB019N08N3G MOSCypress Semiconductor (Infineon Technologies)IPB020N04NINFIPB019N06L3GCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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