IPA60R520C6 Tech Spezifikatioune
Infineon Technologies - IPA60R520C6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPA60R520C6
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.5V @ 230µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-3-111 | |
Serie | CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V | |
Power Dissipation (Max) | 29W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.1A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPA60R520C6.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IPA60R520C6 | IPA60R380E6XKSA1 | IPA60R400CEXKSA1 | IPA60R600E6 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | CoolMOS™ | CoolMOS™ | CoolMOS™ CE | CoolMOS E6™ |
Power Dissipation (Max) | 29W (Tc) | 31W (Tc) | 31W (Tc) | 28W (Tc) |
Vgs (th) (Max) @ Id | 3.5V @ 230µA | 3.5V @ 320µA | 3.5V @ 300µA | 3.5V @ 200µA |
Package protegéieren | Bulk | Tube | Tube | Bulk |
Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V | 380mOhm @ 3.8A, 10V | 400mOhm @ 3.8A, 10V | 600mOhm @ 2.4A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V | 700 pF @ 100 V | 700 pF @ 100 V | 440 pF @ 100 V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Supplier Device Package | PG-TO220-3-111 | PG-TO220-FP | PG-TO220-FP | PG-TO220-3-111 |
Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V | 32 nC @ 10 V | 32 nC @ 10 V | 20.5 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.1A (Tc) | 10.6A (Tc) | 10.3A (Tc) | 7.3A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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