IPA60R180P7XKSA1 Tech Spezifikatioune
Infineon Technologies - IPA60R180P7XKSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPA60R180P7XKSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 280µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220 Full Pack | |
Serie | CoolMOS™ P7 | |
Rds On (Max) @ Id, Vgs | 180mOhm @ 5.6A, 10V | |
Power Dissipation (Max) | 26W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1081 pF @ 400 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | |
Basis Produktnummer | IPA60R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPA60R180P7XKSA1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IPA60R180P7XKSA1 | IPA60R190E6 | IPA60R180P7SXKSA1 | IPA60R180C7 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Serie | CoolMOS™ P7 | CoolMOS™ | CoolMOS™ P7 | CoolMOS™ |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Vgs (th) (Max) @ Id | 4V @ 280µA | 3.5V @ 630µA | 4V @ 280µA | 4V @ 260µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 63 nC @ 10 V | 25 nC @ 10 V | 24 nC @ 10 V |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 20.2A (Tc) | 18A (Tc) | 9A (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Basis Produktnummer | IPA60R | - | IPA60R | - |
Entworf fir Source Voltage (Vdss) | 650 V | 600 V | 600 V | 600 V |
Power Dissipation (Max) | 26W (Tc) | 34W (Tc) | 26W (Tc) | 29W (Tc) |
Supplier Device Package | PG-TO220 Full Pack | PG-TO220-3-111 | PG-TO220-FP | PG-TO220-3-111 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tube | Bulk | Tube | Bulk |
Rds On (Max) @ Id, Vgs | 180mOhm @ 5.6A, 10V | 190mOhm @ 9.5A, 10V | 180mOhm @ 5.6A, 10V | 180mOhm @ 5.3A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1081 pF @ 400 V | 1400 pF @ 100 V | 1081 pF @ 400 V | 1080 pF @ 400 V |
Eroflueden IPA60R180P7XKSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPA60R180P7XKSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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